| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystalline silicon-based solar cell, wherein an electrode of the crystalline silicon-based solar cell with superior characteristics can be formed in a short time. <P>SOLUTION: The method of manufacturing the crystalline silicon-based solar cell includes steps of preparing a conductive paste containing an inorganic material composed of conductive particles and glass frit, which in turn contains 70 to 90 wt.% PbO for 100 wt.% glass frit and does not contain Al<SB>2</SB>O<SB>3</SB>; applying the conductive paste over a top surface and/or a reverse surface of a crystalline substrate; and baking the applied conductive paste at a baking temperature for a baking time such that a pseudo-integral value (S=Δt/2[°C second]) which is a half of the product of a temperature (Δ=Tp-600[°C]) obtained by subtracting 600°C from a peak temperature (Tp[°C]) of the baking and a time (t [second]) of the baking at≥600°C is 95-1,150°C second. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
