发明名称 NONVOLATILE MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND METHOD OF OPERATING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide: a nonvolatile memory element; a method of manufacturing the same; and a method of operating the same. SOLUTION: The nonvolatile memory element includes: a substrate; a plurality of first signal lines vertically arranged on the substrate; a plurality of memory cells arranged to connect one ends thereof to the plurality of respective first signal lines; a plurality of second signal lines arranged on the substrate perpendicularly to the plurality of first signal lines, and each connected to the other end of each of the plurality of memory cells; and a plurality of selection elements arranged on the substrate to be each connected to at least two of the plurality of first signal lines. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011086918(A) 申请公布日期 2011.04.28
申请号 JP20100193645 申请日期 2010.08.31
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM HO-JUNG;YOO IN-KYEONG;KIM CHANG-JUNG;HONG KI-HA
分类号 H01L27/10;G11C13/00;H01L45/00;H01L49/00 主分类号 H01L27/10
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