发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device includes a semiconductor substrate, a cell region, an outer peripheral region, a field plate, an outermost peripheral ring, outer peripheral region layer, an insulator film, and a Zener diode. The semiconductor substrate has a superjunction structure. The outer peripheral region is disposed at an outer periphery of the cell region. The Zener diode is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring. The Zener diode has a first conductivity type region and a second conductivity type region that are alternately arranged in a direction from the cell region to the outer peripheral region.
申请公布号 US2011095303(A1) 申请公布日期 2011.04.28
申请号 US20100980573 申请日期 2010.12.29
申请人 DENSO CORPORATION 发明人 MIYAJIMA TAKESHI
分类号 H01L29/24;H01L29/78 主分类号 H01L29/24
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