| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein breakdown voltage does not decrease easily, and the area of element region can be enlarged. <P>SOLUTION: On the semiconductor substrate 12 of the semiconductor device 10, formed are: a first active region 14 in which a semiconductor element is formed; a second active region 16 in which a semiconductor element is formed; and an inactive region in which a gate pad 18 is formed. In the plan view of the semiconductor substrate 12, (a) the first active region 14 and the second active region 16 are formed in rectangular shape, (b) the gate pad 18 and the second active region 16 are arranged side by side in the y direction, (c) the gate pad 18 and the second active region 16 are arranged side by side in the x direction for the first active region 14, and (d) the lengths in the y direction of the gate pad 18 and the second active region 16 are set shorter than the length in the y direction of the first active region 14. <P>COPYRIGHT: (C)2011,JPO&INPIT |
