SAMPLE TABLE AND MICROWAVE PLASMA PROCESSING APPARATUS

摘要

Disclosed is a sample table, which can stably hold a semiconductor wafer by maintaining smoothness of the contact surface by means of lapping and by having the contact surface substantially in a concave shape. Also disclosed is a microwave plasma processing apparatus provided with the sample table. The sample table (2), which holds the semiconductor wafer (W) to be plasma-processed, is provided with: a suction plate, which has been lapped, has the contact surface having the semiconductor wafer (W) in surface-contact therewith, and sucks the semiconductor wafer (W) in surface-contact with the contact surface; and a supporting substrate having the concave surface having the non-contact surface of the suction plate bonded thereto. The difference between the depth of the substantially center portion of the concave surface and the depth of a separated portion that is separated from the center portion is configured larger than the difference between the thickness of the suction plate portion in contact with the center portion, and the thickness of the suction plate portion in contact with the separated portion. Furthermore, the microwave plasma processing apparatus is provided with the sample table (2).