| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device, for manufacturing an optical integrated circuit smaller than a high-mesa structure and having no problem in characteristics of a waveguide, strong in mechanical strength by using a group III-V semiconductor to form an optical waveguide having the same refractive index difference as a silicon thin line. SOLUTION: The optical semiconductor device has a substrate 1, and a second etching stop layer 4 and a core layer 2, and an organic material clad layer 3 having a lower refractive index than the core layer 2, formed on the substrate 1. In the optical semiconductor device, the organic material clad layer 3 is formed on the second etching stop layer 4, and the whole outer peripheral face of the core layer 2 is covered with the organic material clad layer 3. In addition, the structure is formed by etching a layered structure formed by sequentially stacking the second etching stop layer, the clad layer, a first etching stop layer, and the core layer on the substrate 1, for one side and the other side in a width direction, separately. COPYRIGHT: (C)2011,JPO&INPIT |
