| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device, for manufacturing an optical integrated circuit smaller than a high-mesa structure and having no problem in characteristics of a waveguide, strong in mechanical strength by using a group III-V semiconductor to form an optical waveguide having the same refractive index difference as a silicon thin line. SOLUTION: The optical semiconductor device has a structure of a compound semiconductor thin line waveguide by sequentially stacking a second etching stop layer 2, a semiconductor clad layer 3, a first etching stop layer 4, and a core layer 5 on a substrate 1. The first etching stop layer 4 and the clad layer 3 are formed in a width narrower than the width of the core layer 5, to function as a strut 7 connecting the core layer 5 and the second etching stop layer 2. The whole outer periphery of the core layer 5 excluding a connection part with the strut 7 and both sides of the strut 7 are covered with a clad part 6 using an organic material of a lower refractive index than the core layer 5. COPYRIGHT: (C)2011,JPO&INPIT |
