| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for processing development, capable of developing a resist pattern having a rectangle shape whose tip is not rounded, and capable of processing with sufficient accuracy a film to be etched, when etching the under layer film to be etched using the resist pattern as a mask. SOLUTION: The development processing method includes an amine treatment process S12 which processes a substrate of which the exposure processing is carried out, with a processed gas or a processed liquid containing amine system compound or pyrrolidone system compound, after a resist film is formed on the substrate, a heat-treatment process S11 which heat-treats the substrate, and developing solution supply processes S13, S14 which carry out development processing of the resist pattern by supplying a developing solution on the substrate, after the amine treatment process S12 and the heat treatment process S11 are carried out. COPYRIGHT: (C)2011,JPO&INPIT
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