<p>Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.</p>
申请公布号
WO2011049585(A1)
申请公布日期
2011.04.28
申请号
WO2009US62686
申请日期
2009.10.30
申请人
SYNOPSYS, INC.;SU, QING;NI, MIN;TANG, ZONGWU;KAWA, JAMIL;SPROCH, JAMES, D.
发明人
SU, QING;NI, MIN;TANG, ZONGWU;KAWA, JAMIL;SPROCH, JAMES, D.