发明名称 |
VERTICALLY STRUCTURED SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
The present invention is related to a supporting substrate for manufacturing vertically-structured semiconductor light emitting device and a vertically-structured semiconductor light emitting device using the same, which minimize damage and breaking of a multi-layered light-emitting structure thin film separated from a sapphire substrate during the manufacturing process, thereby improving the whole performance of the semiconductor light emitting device. The supporting substrate for manufacturing the vertically-structured semiconductor light emitting device of the present invention comprises: a selected supporting substrate formed of a material having a difference of thermal expansion coefficient of 5 ppm or less from a sapphire substrate on which a multi-layered light-emitting structure thin film comprising a Group III-V nitride-based semiconductor is laminated; a sacrificial layer formed on the selected supporting substrate; a thick metal film formed on an upper part of the sacrificial layer; and a bonding layer formed on an upper part of the thick metal layer and formed of a soldering or brazing alloy material. |
申请公布号 |
EP2315268(A2) |
申请公布日期 |
2011.04.27 |
申请号 |
EP20090798112 |
申请日期 |
2009.07.15 |
申请人 |
KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION |
发明人 |
SEONG, TAE YEON |
分类号 |
H01L33/62;H01L21/762;H01L33/00 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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