| 摘要 |
<p>PURPOSE: A photo-resist composition is provided to improve the line-width roughness and the critical dimension uniformity of a pattern profile in a resist pattern. CONSTITUTION: A photo-resist composition includes a compound, a resin, and an acid generator. The compound generates acid and base by the irradiation of radiation. The resin includes acid-labile group and is dissolved in an alkaline aqueous solution by the action of acid. The base generated from the compound is represented by chemical formula IB. In the chemical formula IB, R1, R2, and R3 are respectively C1 to C12 hydrocarbon with or without one or more substituted group.</p> |
