GROUP III NITRIDE CRYSTAL AND METHOD OF ITS MANUFACTURE

摘要

PURPOSE: A III group nitride crystal and a manufacturing method thereof are provided to improve the growth of the III group nitride crystal by locally cooling the seed crystal. CONSTITUTION: A reaction container(21) is heated by a heater(23) to remove moisture. A melt solution including an III group element and a catalyst is formed around the seed crystal in the reaction container. The III group nitride crystal is grown on the seed crystal by supplying the nitride containing materials to the melted solution. The temperature of the melted solution falls from the interface between the nitride containing materials and the melted solution to the interface between the seed crystal and the melted solution or the interface between the III group nitride crystal grown on the seed crystal and the melted solution.