发明名称 |
PROCESS FOR PRODUCING SINGLE CRYSTAL |
摘要 |
The present invention provides a method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber in accordance with Czochralski method, comprising pulling a single crystal having a defect-free region which is outside an OSF region to occur in a ring shape in the radial direction and which interstitial-type and vacancy-type defects do not exist in, wherein the pulling of the single crystal is performed with being controlled so that an average of cooling rate in passing through a temperature region of the melt point of the single crystal to 950 °C is in the range of 0.96 °C/min or more and so that an average of cooling rate in passing through a temperature region of 1150 °C to 1080 °C is in the range of 0.88 °C/min or more and so that an average of cooling rate in passing through a temperature region of 1050 °C to 950 °C is in the range of 0.71 °C/min or more. Thereby, production margin in pulling a single crystal having a defect-free region can be considerably enlarged and therefore there can be provided a method for producing a single crystal by which production yield and productivity of the crystal having the defect-free region can be considerably improved. |
申请公布号 |
EP1679392(A4) |
申请公布日期 |
2011.04.27 |
申请号 |
EP20040792564 |
申请日期 |
2004.10.19 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
HOSHI, RYOJI;SONOKAWA, SUSUMU |
分类号 |
C30B15/20;C30B29/06;C30B33/02 |
主分类号 |
C30B15/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|