发明名称 |
GROUP III NITRIDE CRYSTAL, METHOD OF ITS MANUFACTURE, AND EQUIPMENT FOR MANUFACTURING GROUP III NITRIDE CRYSTAL |
摘要 |
PURPOSE: A III group nitride crystal, a manufacturing method thereof, and a manufacturing apparatus thereof are provided to improve the growth of the III group nitride crystal on a seed crystal by removing a surface oxide layer of melt solutions. CONSTITUTION: A melt solution including a III group element and a catalyst is formed around a seed crystal in a reaction container(21). The reaction container is installed in an external container(22) and receives the melt solution including the catalyst and the III group element around the seed crystal. A III group nitrogen crystal is grown on the seed crystal by supplying nitrogen containing material to the melt solution. A heater and an insulation member are made of graphite in the external container.
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申请公布号 |
KR20110043562(A) |
申请公布日期 |
2011.04.27 |
申请号 |
KR20110022580 |
申请日期 |
2011.03.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIROTA RYU;NAKAHATA SEIJI |
分类号 |
C30B29/38;C30B9/00;C30B9/12;C30B11/00;C30B17/00;C30B29/40 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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