| 摘要 |
The sensor has a pixel (401) positioned between other two pixels, each of the pixel has a photodiode region (404, 412, 416) surrounded by an isolation trench (406, 413, 417). A charge transfer gate (425) has a column electrode surrounded by an insulating layer (428) positioned in an opening (410) of the isolation trench between the former pixel and one of the other two pixels. Another column electrode is configured to receive a transfer voltage signal. An independent claim is also included for a method of manufacturing an image sensor. |
