发明名称 EQUIPMENT FOR MANUFACTURING GROUP III NITRIDE CRYSTAL
摘要 PURPOSE: An apparatus for manufacturing an III group nitride crystal is provided to improve the growth of an III group nitride crystal in a seed crystal by removing the surface oxide layer of the melt solution and removing the moisture of the reaction container. CONSTITUTION: A melt solution, including an III group element and a catalyst, is formed around a seed crystal. An III group nitride crystal is grown on the seed crystal by supplying nitrogen containing materials to the melt solution. A nitrogen containing material supply device(31) and a nitrogen containing material supply tube(32) are arranged in the reaction container and supply the nitrogen containing material. The reaction container receives the melt solution including the III group element and the catalyst around the seed crystal. The seed crystal is locally cooled by a coolant(42).
申请公布号 KR20110043563(A) 申请公布日期 2011.04.27
申请号 KR20110022581 申请日期 2011.03.14
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HIROTA RYU;NAKAHATA SEIJI
分类号 C30B29/38;C30B9/00;C30B9/12;C30B11/00;C30B17/00;C30B29/40 主分类号 C30B29/38
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