PROCESS FOR PRODUCTION OF AlxGa(1-X)N SINGLE CRYSTAL, AlxGa(1-X)N SINGLE CRYSTAL, AND OPTICS

摘要

A method of producing an Al x Ga (1-x) N (0 < x ‰¤ 1) single crystal (10) is directed to growing an Al x Ga (1-x) N single crystal (10) by sublimation. The method includes the steps of preparing an underlying substrate having a composition ratio x identical to the composition ratio of the Al x Ga (1-x) N single crystal, preparing a raw material of high purity, and growing an Al x Ga (1-x) N single crystal (10) on the underlying substrate by sublimating the raw material. The Al x Ga (1-x) N single crystal (10) has an absorption coefficient less than or equal to 100 cm -1 with respect to light at a wavelength greater than or equal to 250 nm and less than 300 nm, and an absorption coefficient less than or equal to 21 cm -1 with respect to light at a wavelength greater than or equal to 300 nm and less than 350 nm.