A structured strained substrate for forming strained transistors with reduced thickness of active layer,申请号GB20110004388-传众专利搜索

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发明名称	A structured strained substrate for forming strained transistors with reduced thickness of active layer
摘要
申请公布号	GB201104388(D0)	申请公布日期	2011.04.27
申请号	GB20110004388	申请日期	2009.08.28
申请人	ADVANCED MICRO DEVICES, INC	发明人
分类号		主分类号
代理机构		代理人
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