| 摘要 |
1,125,061. Deposition of silicon. DOW CORNING CORP. 18 Jan., 1967 [12 May, 1966], No. 2667/67. Heading C1A. [Also in Divsions C7 and H1] A large number of semi-conductor crystals which are substantially identical as to resistivity, thickness &c. are produced simultaneously by mounting substrate bodies 36 with their exposed surfaces substantially vertical in recesses 34 in a cylinder 32 and causing vapour phase semi-conductor to impinge on the exposed surface of each substrate through a corresponding aperture 29. The vapour is a volatile compound (e.g. SiCl 4 ) of the required semiconductor and the substrates are heated so that the deposited semi-conductor is formed by pyrolitic decomposition of the vapour. In the apparatus shown the vapour enters the inlet 27, the cylinder 32 is heated by an electric heater element 42 and the whole apparatus is surrounded by a water cooled jacket 11. The heater 42 and the cylinder 32 may be relatively rotatable; and the construction may be .so modified that the direction of gas flow from the apertures 29 to the bodies-36 is radially outward rather than radially inward as shown. |
