发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR CRYSTAL OF NITRIDE OF ELEMENT BELONGING TO GROUP-III, SEMICONDUCTOR SUBSTRATE FORMED OF NITRIDE OF ELEMENT BELONGING TO GROUP-III, AND SEMICONDUCTOR LIGHT EMISSION DEVICE |
摘要 |
<p>The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.</p> |
申请公布号 |
EP2154272(A4) |
申请公布日期 |
2011.04.27 |
申请号 |
EP20080764307 |
申请日期 |
2008.05.16 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
FUJITO, KENJI;KIYOMI, KAZUMASA |
分类号 |
C30B29/38;C30B25/20;H01L33/16;H01L33/32 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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