发明名称 |
PROCESS FOR PRODUCING PHOTORESIST PATTERN |
摘要 |
<p>PURPOSE: A method for manufacturing a photoresist pattern is provided to reduce performance deterioration due to the inactivation of acid by adding nitrogen-containing organic base compound as a quencher. CONSTITUTION: A first photoresist film is formed by drying a first photoresist compound after the first photoresist compound including a resin and an acid generator is coated on a substrate. A prebaked first photoresist layer is exposed with radiation. A first photoresist pattern is formed by developing the first photoresist layer which is baked by using a first alkali developer. A coating layer is formed on the first photoresist pattern. A second photoresist layer is formed by drying a second photoresist compound after the second photoresist compound is coated on a coating layer. The prebaked second photoresist layer is exposed with radiation. A second photoresist pattern is formed by developing the baked second photoresist layer using a second alkali developer.</p> |
申请公布号 |
KR20110043466(A) |
申请公布日期 |
2011.04.27 |
申请号 |
KR20100100978 |
申请日期 |
2010.10.15 |
申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
HATA MITSUHIRO;HASHIMOTO KAZUHIKO |
分类号 |
H01L21/312;H01L21/027 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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