发明名称 |
PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION APPARATUS |
摘要 |
<p>A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.</p> |
申请公布号 |
EP2315258(A1) |
申请公布日期 |
2011.04.27 |
申请号 |
EP20080877746 |
申请日期 |
2008.10.30 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
MASHIMA, HIROSHI;ASAKUSA, KOICHI;TAKANO, AKEMI;YAMASHITA, NOBUKI;TAKEUCHI, YOSHIAKI |
分类号 |
H01L31/075;H01L31/04 |
主分类号 |
H01L31/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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