发明名称 |
PRODUCTION METHOD FOR A III-V BASED OPTOELECTRONIC SEMICONDUCTOR CHIP CONTAINING INDIUM AND CORRESPONDING CHIP |
摘要 |
<p>An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).</p> |
申请公布号 |
EP2313934(A1) |
申请公布日期 |
2011.04.27 |
申请号 |
EP20090775997 |
申请日期 |
2009.07.21 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
LUTGEN, STEPHAN;EICHLER, CHRISTOPH;SCHILLGALIES, MARC;QUEREN, DESIREE |
分类号 |
H01L33/24;H01L33/00 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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