| 摘要 |
<p>PURPOSE: A flash memory manufacturing method is provided to reduce the resistance by reducing the length of the overall SAS area by connecting the active area and the field area. CONSTITUTION: An element isolation film is formed on a semiconductor substrate(100) in order to define the active area and the field area. A gate pattern is formed on the active area of the semiconductor substrate. An SAS(self-aligned source) area(220) is formed at the depth close to the bottom surface of the element isolation layer by implementing the ion injection process on the active area of the semiconductor substrate.</p> |
