| 摘要 |
A non-volatile memory device and a method of fabricating the same are disclosed. The method includes the steps of: providing a semiconductor substrate having isolation layers in an isolation region, a tunnel insulating layer formed between the isolation layers, and first electron charge layers formed between the isolation layers, wherein the isolation layers comprise projections extending higher than the semiconductor substrate; etching the first electron charge layers, thereby reducing the thickness of the first electron charge layers and exposing sidewalls of the isolation layers; performing a first etch process to reduce the width of the projections; forming second electron charge layers between the projections on the first electron charge layers; and performing a second etch process to remove the projections between the second electron charge layers.
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