| 摘要 |
A method for producing high-purity monocrystalline silicon by the method of uncrucible zone melting, in which the technological process of refining of the metallurgical silicon is carried out, using at least two similar devices, at that after the finishing of the preparation of the first device to the process of refining and to the start of the technological refining process of the metallurgical silicon, a second similar device is automatically applied and preparation thereof is carried out with following realization of the refining process, and after the finishing of the technological refining process in the first device and its automatically shut off, the workpiece of the refined silicon is removed from it and then its preparation to the refining process of the following workpiece of metallurgical silicon is carried out again. The plant for producing high-purity monocrystalline silicon by the method of uncrucible zone melting contains the device with the block of temperature measurement, which is optically connected to the melting zone of the material and is electrically connected to the program control unit, and the program control unit is electrically connected to the block of temperature measurement with the energy source and mechanism of movement. |
