| 摘要 |
A method for growing a nitride semiconductor has a first step for forming a surface reformation layer on a sapphire substrate, a second step for raising a temperature of the sapphire substrate with the surface reformation layer formed thereon up to a growth temperature of the nitride semiconductor in an atmosphere including ammonia, and a third step for growing a nitride semiconductor layer on a surface of the surface reformation layer. Alternatively, the second step is conducted in an atmosphere including an inert gas, or an atmosphere including the inert gas and hydrogen at a concentration of 10% or less relative to the inert gas.
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