发明名称 |
Method of forming a bipolar transistor and semiconductor component thereof |
摘要 |
A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.
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申请公布号 |
US7932145(B2) |
申请公布日期 |
2011.04.26 |
申请号 |
US20090566569 |
申请日期 |
2009.09.24 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
JOHN JAY P.;KIRCHGESSNER JAMES A.;MENNER MATTHEW W. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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