发明名称 |
T-gate forming method for high electron mobility transistor and gate structure thereof |
摘要 |
A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.
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申请公布号 |
US7932540(B2) |
申请公布日期 |
2011.04.26 |
申请号 |
US20070700946 |
申请日期 |
2007.02.01 |
申请人 |
POSTECH FOUNDATION;POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
JEONG YOON-HA;LEE KANG-SUNG;KIM YOUNG-SU;HONG YUN-KI;JUNG SUNG-WOO |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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