METHOD OF FABRICATING VERTICAL STRUCTURE COMPOUND SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method of manufacturing vertical structure compound semiconductor devices is provided to reduce the generation of crack on the thin epitaxial thin layer by using the AlGaN damping layer in order to prepare for the high energy impact layer of the laser beam. CONSTITUTION: A plurality of vertical structure photoelectron devices(100) is manufactured on a crystal substrate. The crystal substrate is removed from the plurality of vertical structure photoelectron devices by using the laser lift-off process. The metal support structure is manufactured in stead of the crystal substrate. The metal support structure is plated by using one or greater among electroplating and electroless plating. A buffer layer(114) is manufactured between the vertical structure photoelectron device and the metal support structure.