LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve the light emitting efficiency by comprising the reflection prevention crystal layer having the predetermined thickness. CONSTITUTION: The first type semiconductor layer is arranged in the top of the substrate. The active layer(24) is arranged on the first type semiconductor layer. The second version semiconductor layer is arranged on the active layer. The anti-reflection photonic crystal layer(30) comprises the reflection barrier layer and plurality of holes(30b). A plurality of holes is periodically arranged in order to form the photonic band gap within the reflection barrier layer.