| 摘要 |
PURPOSE: A film bulk acoustic resonator and manufacturing method thereof are provided to improve the frequency properties of an FBAR(Film Bulk Acoustic Resonator) device, thereby increasing the frequency properties of a duplexer. CONSTITUTION: A cavity(112) is formed on a substrate(101). A first electrode(106), a piezoelectric layer(107), and a second electrode(108) are formed on the cavity in order. A temperature compensation layer(109) is formed on the second electrode. The temperature compensation layer is composed of SiO2. The temperature compensation layer includes a protruded part(113) in an edge of the cavity to change the frequency property of an FBAR. |
