| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing medium for CMP capable of suppressing the occurrence of dishing, thinning and polishing flaws in copper or copper alloy wiring, achieving high speed polishing for a barrier layer of tantalum, tantalum alloy, tantalum compound or the like in low concentration of abrasive particles, and forming an embedded pattern of a metal film having high reliability, and a method for polishing a substrate by using the same. <P>SOLUTION: The invention provides a polishing medium for chemical mechanical polishing comprising an oxidizing agent for a conductor, a protective film forming agent for protecting a metal surface, an acid, and water, the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3 wt.%. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
