| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for closely embedding insulation films leaving no vacant space into an element isolating channel. SOLUTION: The method of manufacturing the semiconductor device includes the steps of forming a tunnel insulating film 2 and a floating gate electrode 3 on a semiconductor substrate 1, forming a silicon nitride film 4 containing a low-density silicon nitride film 41 and a high-density silicon nitride film 42 on the floating gate electrode, forming an element isolating channel 6 by processing the silicon nitride film, floating gate electrode, tunnel insulating film, and semiconductor substrate and exposing the low-density silicon nitride film at least at part of the side surface of the element isolating channel, forming an embedded insulating film 7 covering the internal surface of the element isolating channel, removing the silicon nitride film, and forming an inter-electrode insulating film 8 and a control gate electrode 9 covering the floating gate electrode and the embedded insulating film. COPYRIGHT: (C)2011,JPO&INPIT |
