METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial film-forming apparatus including a sufficient heat insulation structure for processing at high temperature. SOLUTION: A substrate processing apparatus includes: a processing chamber for processing a plurality of substrates 14 arrayed at predetermined intervals; a processing chamber lower heat insulation portion provided below an array region of the substrates, and composed of a plurality of heat insulating members; a gas supply system for supplying a processing gas into the processing chamber; and a controller performing control such that the gas supply system supplies the processing gas into the processing chamber to form silicon carbide films on the substrates. COPYRIGHT: (C)2011,JPO&INPIT