| 摘要 |
Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic or monochromatic illumination source. The illumination is positioned in certain locations including locations where the layer stack includes a reduced number of thin film layers. Such locations may be discrete sampled points located within scribe lines, contact frames or dedicated measurement targets. The light collected from such discrete sampled points is transferred to a photo-sensitive sensor through an optical switch. The spectral signal of the light reflected, transmitted or scattered by the sampled points is collected by the sensor and processed by a controller in such a way that parameters of simplified stacks are used for accurate determination of desired parameters of the full cell stack. In this way the photovoltaic thin film parameters applicable to the quality control are derived e.g. thin film thickness, index of refraction, extinction coefficient, absorption coefficient, energy gap, conductivity, crystallinity, surface roughness, crystal phase, material composition and photoluminescence spectrum and intensity. Manufacturing equipment parameters influencing the material properties may be changed to provide a uniform thin film layer with pre-defined properties.
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