Improvements in or relating to the production of layers of a solid nitride of a semiconductor element on semiconductor crystals

摘要

1,134,352. Nitride layers. SIEMENS A.G. 1 May, 1967 [2 May, 1966], No. 19916/67. Heading C1A. A nitride of a semi-conductor element (Si, Ge, or B) is deposited as a layer on the heated surface of a semi-conductor crystal by deposition from a reaction gas comprising a halogencontaining compound of the semi-conductor element and a nitrogen compound, the components of the gas being mixed immediately adjacent the heated surface. The halogencontaining compound may be RSiX 3 , RR1X 2 , R 2 R1X, (R 2 N) 2 SiX 2 , (R 2 N) 2 SiX-NRXSi(NR 2 ) 2 , or X 3 Si-NR-SiX 3 , where R and R1 are H, alkyl or aryl, and X is Cl, Br, F, or I; preferred compounds are SiCl 4 and SiHCl 3 . The nitrogen compound may be NH 3 , N 2 H 4 , or an alkyl or aryl amine. The reaction gas may also contain a rare gas, H 2 , or N 2 . The semiconductor crystal may be Si, Ge, or a III-V compound, and may have a coating of a metal, SiO 2 , or glass. It may be heated to 400- 800‹ C. by resistance, induction, or gas discharge heating. Ge and B are referred to only.