SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate capable of preventing the occurrence of cracks when forming an epitaxial layer on a nitride layer, and preventing the detachment of the epitaxial layer from the semiconductor substrate, and to provide a method of manufacturing the same. SOLUTION: A semiconductor substrate 10a is used for forming an epitaxial layer on the principal plane 12a of a nitride layer 12. The substrate includes a heterogeneous substrate 11, and a nitride layer 12 formed on the heterogeneous substrate 11. The nitride layer 12 includes a stress relief area. COPYRIGHT: (C)2011,JPO&INPIT