SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce a variation of a characteristic of a semiconductor device having an n-type MIS transistor. SOLUTION: An n-conductivity-type first transistor Q1 formed in a memory region RM on a silicon substrate 1 has: a memory channel region CH1 containing boron; and n-type memory extension regions ET1 and diffusion preventing regions PA1 containing oxygen which are formed below both side walls of a memory gate electrode GE1. Here, the diffusion preventing regions PA1 are formed so as to enclose the memory extension regions ET1. At least a part of each of the diffusion preventing regions PA1 is disposed between the memory extension region ET1 and the memory channel region CH1. COPYRIGHT: (C)2011,JPO&INPIT