| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspecting method for a semiconductor optical device which reduces an effect of processing that is carried out on the semiconductor optical device for EL measurement for the inspection of the semiconductor optical device. SOLUTION: The inspecting method for the semiconductor optical device includes a step (S1) of preparing the semiconductor optical device including a semiconductor lamination composed of a substrate, a semiconductor mesa extending in a prescribed axial direction on the substrate, and an embedding layer in which the semiconductor mesa is embedded, an insulating film on the surface of the semiconductor lamination, a first electrode extending over main surfaces of the insulating film and the semiconductor mesa, and a second electrode formed on the substrate, a step (S2) of forming an opening for observing electroluminescence on the first electrode on the insulating film, a step (S3) of connecting the first and second electrodes to a power supply following the formation of the opening, a step (S4) of applying a current to the semiconductor optical device to generate electroluminescence, and a step (S6) of inspecting a pattern of the electroluminescence via the opening. COPYRIGHT: (C)2011,JPO&INPIT
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