发明名称 VOLTAGE REGULATOR CIRCUIT
摘要 A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.
申请公布号 US2011089927(A1) 申请公布日期 2011.04.21
申请号 US20100909556 申请日期 2010.10.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MIYAKE HIROYUKI;TSUBUKU MASASHI;NODA KOSEI
分类号 G05F3/08 主分类号 G05F3/08
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