| 摘要 |
A semiconductor device comprising curable polyorganosiloxane composites is provided where the composites contain at least 0.1 wt % of the 4th and/or 13th group elements of the periodic table. The cured polyorganosiloxane composites may be catalyst-free, have increased stability, and can be used as encapsulation resin at a temperature far lower than 300° C., have excellent light transmission properties (colorless transparency) in a wavelength region of from ultraviolet light to visible light, light resistance, heat resistance, resistance to moist heat and UV resistance, and has excellent adhesiveness toward metal, ceramics, and plastic surfaces over a long period of time.
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