| 摘要 |
The present invention relates to a thermoelectric conversion device and to a method for manufacturing same. The thermoelectric conversion device comprises: a semiconductor having a heterostructure consisting of hetero semiconductors; at least one of a p-type thermoelectric conversion layer formed by a p-type semiconductor of said semiconductor with the heterostructure and an n-type thermoelectric conversion layer formed by an n-type semiconductor of said semiconductor with the heterostructure; and electrodes installed at both ends of said at least one of the p-type thermoelectric conversion layer and the n-type thermoelectric conversion layer to draw thermoelectromotive force. An electrically insulating layer is formed between the p-type thermoelectric conversion layer and the n-type thermoelectric conversion layer to form an electrically separated structure. A heat-absorbing conductor is arranged in the area in which the electrically insulating layer, the electrodes, and the thermoelectric conversion layer are perpendicularly (vertically) overlapped, to provide the thermoelectric conversion device with high sensitivity and high detecting performance, and to achieve a high integration thermoelectric conversion device. |
