SEMICONDUCTOR DEVICE, DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device including a plurality of types of semiconductor elements which have a thickness in accordance with each of the roles thereof, and are provided with structure sections manufactured in the same process. Specifically disclosed is a semiconductor device (100) which includes a TFT (40) and a photodiode (50). A gate electrode (110) of the TFT (40) and a light-shielding layer (60) of the photodiode (50) are formed in the same process. However, the film thickness of the gate electrode (110) is thin, so that the step separation of an island-shaped silicon layer (120) serving as a channel layer can be prevented at the end of the gate electrode (110). The film thickness of the light-shielding layer (60) is thick, so that light made incident from the surface on the reverse side from the surface of a glass substrate (101) on which the TFT is formed can be reliably shielded by the light-shielding layer (60). This makes it possible to increase the detection sensitivity of the photodiode (50).