| 摘要 |
Embodiments of the invention generally relate processes for epitaxial growing Group Ill/V materials at high growth rates, such as about 30 µm/hr or greater, for example, about 40 µm/hr, about 50 µm/hr, about 55 µm/hr, about 60 µm/hr, or greater. The deposited Group Ill/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group Ill/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group Ill/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group Ill/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof. |
