| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a carbon nanotube device, whereby a high-density carbon nanotube can be grown. SOLUTION: The manufacturing method comprises steps of: forming an underlayer film 2 comprising an oxide, nitride or oxynitride of at least one metal chosen from the group consisting of titanium, tantalum, vanadium and niobium; dispersing catalyst particles 3 comprising a first metal chosen from the group consisting of cobalt, nickel and iron and at least one second metal chosen from the group consisting of titanium, tantalum, vanadium and niobium on the underlayer film 2; and growing the carbon nanotube 4 from the catalyst particles 3 while keeping the temperature of the underlayer film 2 at≤450°C. COPYRIGHT: (C)2011,JPO&INPIT |
