| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that ensures a proper sense margin by suppressing influence of temperature change of a diode in reading a memory cell of a diode cell system. SOLUTION: A semiconductor memory device includes bit lines BLs (first wiring), and a memory cell MC including a phase change element 20 (memory element) and a diode 21 connected in series between the bit lines and word lines WLs (second wiring). In reading the memory cell MC, first voltage having no temperature dependence is applied to the bit lines BLs, while second voltage having temperature dependence opposite to that of forward direction voltage of the diode 21 and having lower second voltage than the first voltage is applied to the word lines WLs, a resistance state of the phase change element 20 is detected by a read circuit 32 in accordance with a change in current flowing in the memory cell MC. COPYRIGHT: (C)2011,JPO&INPIT |
