| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method that forms a fine pattern, provides a high etching selection ratio, and allows patterning at a high aspect ratio. SOLUTION: The dry etching method is used to dry etch a lamination composed of a substrate 1, an etching layer 2 which is overlaid on the substrate 1 and contains at least one etching material selected from a group of etching materials of Si, SiO<SB>2</SB>, and Si<SB>3</SB>N<SB>4</SB>, and a resist layer 3 which is overlaid on the etching layer 2 and contains a resist material containing at least one material selected from a group of metals of Ti, V, Ga, Ge, Nb, Mo, Sb, Te, and W and a group of alloys of metals selected from the group of metals. The dry etching method is carried out using an etching gas which contains at least one compound selected from a group of compounds of CxFy (x is 2 to 4 and y is 2x), CHF<SB>3</SB>, and CH<SB>2</SB>F<SB>2</SB>, and has a mol ratio F/C, which is the mol ratio of F to C in the whole etching gas, of 3 or less in terms of weight ratio. COPYRIGHT: (C)2011,JPO&INPIT |
