| 摘要 |
A HEMT device and a manufacturing of the HEMT device, the HEMT device includes: a buffer layer (14) on the substrate (12); a semiconductor layer on the buffer layer (14); an isolation layer (16, 17) on the semiconductor layer; a source electrode (22) and a drain electrode (23) contacted with the semiconductor layer; and a gate electrode (24, 104 114) between the source electrode (22) and the drain electrode (23); wherein, a channel, which is located in the semiconductor layer below the gate electrode (24, 104, 114), is pinched off.
|
