| 摘要 |
According to one embodiment, a semiconductor storage device includes a first memory cell, a second memory cell and a third memory cell. The first memory cell forms a connection path used for storage of data. The second memory cell varies a connection place from a connection place of the connection path formed in the first memory cell, and stores data different from the data stored in the first memory cell is stored. The third memory cell varies a connection place from the connection place of the connection path formed in the second memory cell, and stores data same as the data stored in the first memory cell is stored.
|
